MAGNESIUM DOPING OF INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

doi:10.1063/1.112091

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	WU, CC	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	CHEN, PA	en_US
dc.contributor.author	CHEN, HD	en_US
dc.contributor.author	LIN, KC	en_US
dc.contributor.author	CHAN, SH	en_US
dc.date.accessioned	2014-12-08T15:03:47Z	-
dc.date.available	2014-12-08T15:03:47Z	-
dc.date.issued	1994-09-05	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.112091	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2326	-
dc.description.abstract	Bis(cyclopentadienyl) magnesium, CP2Mg, was used as a magnesium dopant in the InGaAlP layers by low-pressure metalorganic chemical vapor deposition. The hazy surface morphology of heavily doped InGaAlP layers is significantly improved by using magnesium dopant instead of the conventional zinc dopant. We demonstrate that the effective doping efficiency of magnesium is two orders of magnitude higher than that of zinc dopant in the heavily doped InGaAlP layer grown at 720-degrees-C.	en_US
dc.language.iso	en_US	en_US
dc.title	MAGNESIUM DOPING OF INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.112091	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	65	en_US
dc.citation.issue	10	en_US
dc.citation.spage	1269	en_US
dc.citation.epage	1271	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1994PE88000023	-
dc.citation.woscount	3	-
顯示於類別：	期刊論文