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dc.contributor.authorHsu, Yu-Chengen_US
dc.contributor.authorSou, Kuok-Panen_US
dc.contributor.authorChang, Shih-Pangen_US
dc.contributor.authorHsu, Kung-Shuen_US
dc.contributor.authorShih, M. H.en_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorCheng, Yuh-Jenen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:33:35Z-
dc.date.available2014-12-08T15:33:35Z-
dc.date.issued2013-11-04en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4828997en_US
dc.identifier.urihttp://hdl.handle.net/11536/23271-
dc.description.abstractThis study demonstrates a room-temperature ultraviolet GaN/Al nanorod (NR) metal laser with an optimized sidewall. A wet-chemical etching process with potassium hydroxide was used to control the GaN NR sidewall angle and polish the NR surface. The lasing action was observed near a wavelength of 365 nm with a low threshold power density of 5.2 mJ/cm(2). The high-quality factor (Q) surface plasmon lasing modes were characterized with experiments and three-dimensional finite-element method simulations. We also studied the optical modes in GaN metal-coated NR with and without an Al layer and verified the metal layer is necessary for high-Q resonant modes. (c) 2013 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleRoom temperature ultraviolet GaN metal-coated nanorod laseren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4828997en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume103en_US
dc.citation.issue19en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000327817000002-
dc.citation.woscount1-
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