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dc.contributor.authorHuang, Sheng-Yaoen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorChen, Min-Chenen_US
dc.contributor.authorChen, Te-Chihen_US
dc.contributor.authorJian, Fu-Yenen_US
dc.contributor.authorChen, Yu-Chunen_US
dc.contributor.authorHuang, Hui-Chunen_US
dc.contributor.authorGan, Der-Shinen_US
dc.date.accessioned2014-12-08T15:33:45Z-
dc.date.available2014-12-08T15:33:45Z-
dc.date.issued2013-09-01en_US
dc.identifier.issn0257-8972en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.surfcoat.2011.12.047en_US
dc.identifier.urihttp://hdl.handle.net/11536/23321-
dc.description.abstractThis work presents the light-color-dependent negative bias stress (NBIS) effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) with Al2O3 passivation layer. The colors of incident photon are varied from red to blue, that incident photon energies are all lower than the optical band gap of IGZO (3.2 eV). The experimental results show that the Al2O3 passivated devices present stable electrical behaviors under different incident lights (Delta V-T<0.1 V of dark and red, Delta V-T<1 V of green, and Delta V-T<4 V of blue), whereas the unpassivation devices exhibit observable negative shifts during NBIS (Delta V-T<1 V of dark and red, Delta V-T>8 V of green, and Delta V-T>15 V of blue). The degradation mechanism of the negative bias stress under illumination of a-IGZO TFTs is dominated by the photo-generated hole trapping at the gate insulator and/or interface between insulator and channel. In this result, the Al2O3 passivation layer can effectively passivate the defect in the a-IGZO film, reducing electron hole pair generated during the illumination processed. Crown Copyright (C) 2012 Published by Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectThin film transistorsen_US
dc.subjectIndium gallium zinc oxideen_US
dc.subjectPassivationen_US
dc.subjectBias stressen_US
dc.titleImprovement in the bias stability of amorphous InGaZnO TFTs using an Al2O3 passivation layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.surfcoat.2011.12.047en_US
dc.identifier.journalSURFACE & COATINGS TECHNOLOGYen_US
dc.citation.volume231en_US
dc.citation.issueen_US
dc.citation.spage117en_US
dc.citation.epage121en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000328094200026-
dc.citation.woscount4-
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