標題: Resistive switching behavior of sol-gel deposited TiO2 thin films under different heating ambience
作者: Lai, Chun-Hung
Chen, Chia-Hung
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Anatase;Sol-gel;Resistive switching;XPS
公開日期: 1-Sep-2013
摘要: We prepared anatase TiO2 films by sol-gel method under three thermal firing conditions to investigate the bipolar resistive switching (BRS) and unipolar resistive switching CURS) in Ag/TiO2/Pt structure. The devices are URS in an air atmosphere at 760 Torr, while those in an oxygen ambience at 1 Torr show BRS accompanying with forming-free and self-compliance. By examining the X-ray photoelectron spectroscopy (XPS) spectrum, different non-lattice oxygen content is observed. High concentration of oxygen vacancy is expected under oxygen-deficient treatment, and that would determine the electrode/oxide interface property and induce switching mode of polarity dependent or not. An improved performance of operation voltage dispersion down to 0.5 V and endurance up to 3000 cycles is obtained for those in reducing Ar. (C) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.surfcoat.2012.05.045
http://hdl.handle.net/11536/23329
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2012.05.045
期刊: SURFACE & COATINGS TECHNOLOGY
Volume: 231
Issue: 
起始頁: 399
結束頁: 402
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