標題: | Effect of moisture on electrical properties and reliability of low dielectric constant materials |
作者: | Cheng, Yi-Lung Leon, Ka-Wai Huang, Jun-Fu Chang, Wei-Yuan Chang, Yu-Min Leu, Jihperng 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | Low-k dielectric;Porogen;Moisture;Reliability;Breakdown;TDDB;Electromigration |
公開日期: | 1-Feb-2014 |
摘要: | The effect of absorbed moisture on the electrical characteristics and reliability of low dielectric constant materials (low-k) was investigated in this study. The experimental results reveal that porous low-k dielectrics absorb more moisture than dense low-k dielectrics. This absorbed moisture degrades the electrical performance and reliability of both classes of low-k dielectrics. Annealing at a higher temperature of 400 degrees C is required to decompose the physically-adsorbed moisture and thereby restore reliability performance. However, the chemically-adsorbed moisture seems to be difficult to remove by annealing at 400 degrees C, causing a degraded TDDB performance. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.mee.2013.08.018 http://hdl.handle.net/11536/23370 |
ISSN: | 0167-9317 |
DOI: | 10.1016/j.mee.2013.08.018 |
期刊: | MICROELECTRONIC ENGINEERING |
Volume: | 114 |
Issue: | |
起始頁: | 12 |
結束頁: | 16 |
Appears in Collections: | Articles |
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