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dc.contributor.authorTsai, Wan-Linen_US
dc.contributor.authorChien, Yun-Shanen_US
dc.contributor.authorYang, Po-Yuen_US
dc.contributor.authorLee, I-Cheen_US
dc.contributor.authorWang, Kuang-Yuen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:34:03Z-
dc.date.available2014-12-08T15:34:03Z-
dc.date.issued2013-12-15en_US
dc.identifier.issn0924-4247en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sna.2013.09.027en_US
dc.identifier.urihttp://hdl.handle.net/11536/23413-
dc.description.abstractA glucose sensing film composed of unzipped multiwalled carbon nanotubes (MWCNTs) via continuous-wave laser irradiation is investigated. Some structural defects decorate on MWCNTs after an acid treatment, and the MWCNTs are unzipped into sheet-shaped layers initiated from these defects after the laser irradiation. The laser-irradiated carbon nanotube thin films (CNTFs) possess higher conductance owing to larger contact area, and the side edges of unzipped CNTs could act as sensing sites for hydrogen ions. Thus the laser-irradiated CNTF as a glucose sensing film could achieve a higher sensitivity of 0.302 mV (mg/dl)(-1), equal to 7.55 mV(mg/dl)(-1) per centimeter square, and a larger linearity of 0.9947 than the as-sprayed one. Moreover, the fully low-temperature processes of this work also reveal the potentials for flexible and disposable biosensors. (C) 2013 Published by Elsevier B.V.en_US
dc.language.isoen_USen_US
dc.subjectCarbon nanotube thin filmen_US
dc.subjectGlucose sensoren_US
dc.subjectSeparated enzyme modified field effect transistoren_US
dc.titleLaser-unzipped carbon nanotube based glucose sensor for separated structure of enzyme modified field effect transistoren_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sna.2013.09.027en_US
dc.identifier.journalSENSORS AND ACTUATORS A-PHYSICALen_US
dc.citation.volume204en_US
dc.citation.issueen_US
dc.citation.spage31en_US
dc.citation.epage36en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000328726600004-
dc.citation.woscount0-
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