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dc.contributor.authorZhan, Runzeen_US
dc.contributor.authorDong, Chengyuanen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.date.accessioned2014-12-08T15:34:06Z-
dc.date.available2014-12-08T15:34:06Z-
dc.date.issued2013-12-01en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.microrel.2013.05.007en_US
dc.identifier.urihttp://hdl.handle.net/11536/23436-
dc.description.abstractThe electrical stability of amorphous InGaZnO (a-IGZO) TFTs with three different channel layers was investigated. Compared with the single channel layer, the a-IGZO TFT with double stacked channel layer showed the lowest threshold voltage shift with slightly change in field effect mobility and sub-threshold swing under positive and negative gate bias stress tests. Moreover, sputtered SiNx thin film was served as passivation layer where the Vth shift in bias stress effect evidently became less. It was found that the passivated a-IGZO TFT with double stacked channel layer still exhibited the best stability. The results prove that the stability of a-IGZO TFTs can be effectively improved by using double stacked channel layer and passivation layer. (C) 2013 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleInfluence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.microrel.2013.05.007en_US
dc.identifier.journalMICROELECTRONICS RELIABILITYen_US
dc.citation.volume53en_US
dc.citation.issue12en_US
dc.citation.spage1879en_US
dc.citation.epage1885en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000328667000008-
dc.citation.woscount3-
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