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dc.contributor.authorHuang, Jhih-Kaien_US
dc.contributor.authorLin, Da-Weien_US
dc.contributor.authorShih, Min-Hsiungen_US
dc.contributor.authorLee, Kang-Yuanen_US
dc.contributor.authorChen, Jyun-Rongen_US
dc.contributor.authorHuang, Hung-Wengen_US
dc.contributor.authorKuo, Shou-Yien_US
dc.contributor.authorLin, Chung-Hsiangen_US
dc.contributor.authorLee, Po-Tsungen_US
dc.contributor.authorChi, Gou-Chungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2014-12-08T15:34:07Z-
dc.date.available2014-12-08T15:34:07Z-
dc.date.issued2013-12-01en_US
dc.identifier.issn1551-319Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JDT.2013.2270276en_US
dc.identifier.urihttp://hdl.handle.net/11536/23442-
dc.description.abstractIn this paper, we demonstrated the high performance GaN-based LEDs by using a high aspect ratio cone-shape nano-patterned sapphire substrate (HAR-NPSS). We utilized nano-imprint lithography (NIL) and dry-etching system to fabricate a high depth HAR-NPSS. The micro-scale patterned sapphire substrate (PSS) was also used for comparison. A great enhancement of light output was observed when GaN-based LEDs were grown on a HAR-NPSS or a PSS. The light output power of LEDs with a HAR-NPSS and LEDs with a PSS were enhanced of 49 and 38% compared to LEDs with a unpatterned sapphire substrate. The high output power of the LED with a HAR-NPSS indicated that the technology of NAR-NPSS not only can improve the crystalline quality of GaN-based LEDs but also a promising development to a NPSS.en_US
dc.language.isoen_USen_US
dc.subjectGaNen_US
dc.subjectlight-emitting diodes (LEDs)en_US
dc.subjectnano-imprint lithography (NIL)en_US
dc.subjectnano-patterned sapphire substrate (NPSS)en_US
dc.titleInvestigation and Comparison of the GaN-Based Light-Emitting Diodes Grown on High Aspect Ratio Nano-Cone and General Micro-Cone Patterned Sapphire Substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JDT.2013.2270276en_US
dc.identifier.journalJOURNAL OF DISPLAY TECHNOLOGYen_US
dc.citation.volume9en_US
dc.citation.issue12en_US
dc.citation.spage947en_US
dc.citation.epage952en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000328705800001-
dc.citation.woscount3-
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