完整後設資料紀錄
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dc.contributor.authorWahiduzzaman, Mohammaden_US
dc.contributor.authorOliveira, Augusto F.en_US
dc.contributor.authorPhilipsen, Pieren_US
dc.contributor.authorZhechkov, Lyubenen_US
dc.contributor.authorvan Lenthe, Eriken_US
dc.contributor.authorWitek, Henryk A.en_US
dc.contributor.authorHeine, Thomasen_US
dc.date.accessioned2014-12-08T15:34:24Z-
dc.date.available2014-12-08T15:34:24Z-
dc.date.issued2013-09-01en_US
dc.identifier.issn1549-9618en_US
dc.identifier.urihttp://dx.doi.org/10.1021/ct4004959en_US
dc.identifier.urihttp://hdl.handle.net/11536/23553-
dc.description.abstractA parametrization scheme for the electronic part of the density-functional based tight-binding (DFTB) method that covers the periodic table is presented. A semiautomatic parametrization scheme has been developed that uses Kohn-Sham energies and band structure curvatures of real and fictitious homoatomic crystal structures as reference data. A confinement potential is used to tighten the Kohn-Sham orbitals, which includes two free parameters that are used to optimize the performance of the method. The method is tested on more than 100 systems and shows excellent overall performance.en_US
dc.language.isoen_USen_US
dc.titleDFTB Parameters for the Periodic Table: Part 1, Electronic Structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/ct4004959en_US
dc.identifier.journalJOURNAL OF CHEMICAL THEORY AND COMPUTATIONen_US
dc.citation.volume9en_US
dc.citation.issue9en_US
dc.citation.spage4006en_US
dc.citation.epage4017en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.department應用化學系分子科學碩博班zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentInstitute of Molecular scienceen_US
dc.identifier.wosnumberWOS:000330096800017-
dc.citation.woscount7-
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