Full metadata record
DC FieldValueLanguage
dc.contributor.authorHsu, Hsiao-Hsuanen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorChiou, Shan-Hawen_US
dc.contributor.authorHuang, Chiung-Huien_US
dc.contributor.authorLiu, Chia-Meien_US
dc.contributor.authorLin, Yu-Lien_US
dc.contributor.authorChao, Wen-Hsuanen_US
dc.contributor.authorYang, Ping-Hsingen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorCheng, Chin-Paoen_US
dc.date.accessioned2014-12-08T15:34:26Z-
dc.date.available2014-12-08T15:34:26Z-
dc.date.issued2014-03-05en_US
dc.identifier.issn0925-8388en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jallcom.2013.11.138en_US
dc.identifier.urihttp://hdl.handle.net/11536/23568-
dc.description.abstractThis study involved developing robust diffusion barrier for n-type antimony telluride (SbTe) thermoelectric devices. Compared to conventional Ni barrier, the mid-band metals of Ta and TaN with favored ohmic-like contact exhibited smaller diffusion tail because of structurally stable interface on SbTe, which have been supported by first-principles calculations and demonstrated by experimental results. Furthermore, the TaN barrier has strong ionic Ta-N bonding and a high total energy of -4.7 eV/atom that could effectively suppress the formation of SbTe-compounds interfacial layer. (C) 2013 Elsevier B. V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectThermoelectric deviceen_US
dc.subjectDiffusion barrieren_US
dc.subjectSbTeen_US
dc.subjectFirst-principles calculationsen_US
dc.titleStructural stability of diffusion barriers in thermoelectric SbTe: From first-principles calculations to experimental resultsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jallcom.2013.11.138en_US
dc.identifier.journalJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.citation.volume588en_US
dc.citation.issueen_US
dc.citation.spage633en_US
dc.citation.epage637en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000330179200105-
dc.citation.woscount0-
Appears in Collections:Articles


Files in This Item:

  1. 000330179200105.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.