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dc.contributor.authorWang, Wun-Kaien_US
dc.contributor.authorWen, Hua-Chiangen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorChou, Wu-Chingen_US
dc.contributor.authorYau, Wei-Hungen_US
dc.contributor.authorHung, Ching-Huaen_US
dc.contributor.authorChou, Chang-Pinen_US
dc.date.accessioned2014-12-08T15:34:26Z-
dc.date.available2014-12-08T15:34:26Z-
dc.date.issued2014-03-01en_US
dc.identifier.issn0022-3697en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jpcs.2013.09.016en_US
dc.identifier.urihttp://hdl.handle.net/11536/23573-
dc.description.abstractWe used atomic layer deposition to form ZnO thin-film coatings on Si substrates and then evaluate the effect of pile-up using the nanoscratch technique under a ramped mode. The wear volume decreased with increasing annealing temperature from room temperature to 400 degrees C for a given load. Elastic-to-plastic deformation occurred during sliding scratch processing between the groove and film for loading penetration of 30 nm. The onset of non-elastic behavior and greater contact pressure were evident for loading penetration of 150 nm; thus, full plastic deformation occurred as a result of a substrate effect. We suspect that elastic-plastic failure events were related to edge bulging between the groove and film, with elastic-plastic deformation attributable to adhesion discontinuities and/or cohesion failure of the ZnO films. (C) 2013 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectThin filmsen_US
dc.subjectVapor depositionen_US
dc.subjectMechanical propertiesen_US
dc.titleNanotribological behavior of ZnO films prepared by atomic layer depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jpcs.2013.09.016en_US
dc.identifier.journalJOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDSen_US
dc.citation.volume75en_US
dc.citation.issue3en_US
dc.citation.spage334en_US
dc.citation.epage338en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000329954700004-
dc.citation.woscount0-
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