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dc.contributor.authorWang, Chin-Teen_US
dc.contributor.authorHsu, Li-Hanen_US
dc.contributor.authorWu, Wei-Chengen_US
dc.contributor.authorHsu, Heng-Tungen_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorHu, Yin-Chuen_US
dc.contributor.authorLee, Ching-Tingen_US
dc.contributor.authorTsai, Szu-Pingen_US
dc.date.accessioned2014-12-08T15:34:36Z-
dc.date.available2014-12-08T15:34:36Z-
dc.date.issued2014-01-01en_US
dc.identifier.issn1531-1309en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LMWC.2013.2285213en_US
dc.identifier.urihttp://hdl.handle.net/11536/23624-
dc.description.abstractFlip-chip package has great potential for use in millimeter-wave applications. However, the coefficient of thermal expansion mismatch between the chip and the substrate usually generates thermal stresses that fracture the flip-chip structure. The use of underfills with low dielectric loss is essential to improve the mechanical strength and reliability of the flip-chip package. Benzocyclobutene (BCB) was used in this study as the underfill material for the flip-chip structure using the no-flow process. The flip-chip structure with BCB injection provides good RF performance with a return loss of better than 18 dB and an insertion loss of 0.6 dB up to 100 GHz, in addition to a lower dielectric loss. Furthermore, thermal cycle and shear force tests show that the underfill injection can significantly improve the reliability of a flip-chip package.en_US
dc.language.isoen_USen_US
dc.subjectBenzocyclobutene (BCB)en_US
dc.subjectflip-chip packagingen_US
dc.subjectmillimeter-waveen_US
dc.subjectreliabilityen_US
dc.subjectW-banden_US
dc.titleInvestigation of the Flip-Chip Package With BCB Underfill for W-Band Applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LMWC.2013.2285213en_US
dc.identifier.journalIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERSen_US
dc.citation.volume24en_US
dc.citation.issue1en_US
dc.citation.spage11en_US
dc.citation.epage13en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000329873700005-
dc.citation.woscount0-
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