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dc.contributor.authorHong, Yun-Ruen_US
dc.contributor.authorChen, Pin-Kuanen_US
dc.contributor.authorWang, Jen-Chunen_US
dc.contributor.authorLee, Ming-Kunen_US
dc.contributor.authorHorng, Sheng-Fuen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.date.accessioned2014-12-08T15:34:38Z-
dc.date.available2014-12-08T15:34:38Z-
dc.date.issued2014-01-01en_US
dc.identifier.issn0927-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.solmat.2013.09.002en_US
dc.identifier.urihttp://hdl.handle.net/11536/23642-
dc.description.abstractWe report our observation of simultaneous enhancement in large-area coatability and photovoltaic performance for blade-coated inverted P3HT:PCBM organic solar cells with DCB:hexane co-solvent. The addition of hexane improves greatly the wettability of P3HT:PCBM blend layer on Cs2CO3 treated ITO and leads to excessively higher P3HT surface concentration due to the incongruent evaporation of hexane and DCB. A post-processing light soaking was found to further improve the photovoltaic performance for blade-coated devices prepared with co-solvent by adjusting the P3HT surface concentration ratio for more favorable carrier transport, as evidenced by the disappearance of current suppression at forward bias and significant increase in V-oc after light soaking. Since large-area manufacturing is the key to full commercialization of organic solar cells, the use of co-solvent, combined with light soaking, may be crucial for the development of inverted organic solar cells. (C) 2013 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectLarge area manufacturingen_US
dc.subjectOrganic solar cellsen_US
dc.subjectCo-solventen_US
dc.subjectBlade coatingen_US
dc.subjectLight soakingen_US
dc.titleSimultaneous enhancement in both large-area coatability and photovoltaic performance of inverted organic solar cells with co-solventen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.solmat.2013.09.002en_US
dc.identifier.journalSOLAR ENERGY MATERIALS AND SOLAR CELLSen_US
dc.citation.volume120en_US
dc.citation.issueen_US
dc.citation.spage197en_US
dc.citation.epage203en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000329595400025-
dc.citation.woscount0-
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