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dc.contributor.authorCHIOU, BSen_US
dc.contributor.authorLIN, MCen_US
dc.date.accessioned2014-12-08T15:03:50Z-
dc.date.available2014-12-08T15:03:50Z-
dc.date.issued1994-08-15en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://hdl.handle.net/11536/2366-
dc.description.abstractIn this study r.f. magnetron sputtering is employed to deposit amorphous Ca-doped titanate film on silicon substrate. The as-deposited BaTiO3 film has a 1 MHz dielectric constant of 14 and a refractive index of 1.9 at a wavelength of 6328 angstrom. The capacitance voltage characteristics of the BaTiO3 film suggest a Poole Frenkel transport mechanism with oxygen vacancies as one of the positively charged traps. The remanent polarization in the BaTiO3 films affects its current voltage curve. The fatigue behaviour of the BaTiO3 films is improved by the introduction of oxygen gas during sputtering and/or the addition of dopant calcium. No fatigue is observed for (Ba0.9Ca0.1)TiO3 film up to a switching cycle of 10(10).en_US
dc.language.isoen_USen_US
dc.titleELECTRICAL-PROPERTIES OF AMORPHOUS BARIUM-TITANATE FILMS PREPARED BY LOW-POWER RF-SPUTTERINGen_US
dc.typeArticleen_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume248en_US
dc.citation.issue2en_US
dc.citation.spage247en_US
dc.citation.epage252en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994PB86600019-
dc.citation.woscount11-
Appears in Collections:Articles