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dc.contributor.authorTSAI, KLen_US
dc.contributor.authorLEE, CPen_US
dc.contributor.authorTSANG, JSen_US
dc.contributor.authorCHEN, HRen_US
dc.date.accessioned2014-12-08T15:03:50Z-
dc.date.available2014-12-08T15:03:50Z-
dc.date.issued1994-08-04en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:19940866en_US
dc.identifier.urihttp://hdl.handle.net/11536/2368-
dc.description.abstractA two-colour infra-red photodetector using multistacks of GaAs/AlGaAs quantum wells is demonstrated. The response peaks are at 3.9 and 8.1 mum. The peak responsivities of the detector are 0.4A/W and 35mA/W for 8.1mum and 3.9mum bands, respectively. The detectivities of the 3.9 and 8.1 mum bands are 7.5 x 10(9) and 1.5 x 10(10)cmHz1/2/W. These values are the best reported results for two-colour detectors with peak sensitivities in the spectral regions of 3-5 and 8-12mum.en_US
dc.language.isoen_USen_US
dc.subjectINFRARED DETECTORSen_US
dc.subjectINFRARED IMAGINGen_US
dc.subjectIMAGE SENSORSen_US
dc.subjectSEMICONDUCTOR QUANTUM WELLSen_US
dc.title2-COLOR QUANTUM-WELL INFRARED PHOTODETECTOR WITH PEAK SENSITIVITIES AT 3.9 MU-M AND 8.1 MU-Men_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:19940866en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume30en_US
dc.citation.issue16en_US
dc.citation.spage1352en_US
dc.citation.epage1353en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994PC86200065-
dc.citation.woscount1-
Appears in Collections:Articles


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