完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLin, CRen_US
dc.contributor.authorKuo, CTen_US
dc.contributor.authorChang, RMen_US
dc.date.accessioned2014-12-08T15:01:22Z-
dc.date.available2014-12-08T15:01:22Z-
dc.date.issued1997-10-31en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0040-6090(97)00392-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/236-
dc.description.abstractTwo different deposition processes were carried out to enhance adherence of diamond films on WC + 3 similar to 5%Co substrate with Ti-Si as the interlayer. One process can be called two-step diamond deposition process. Another process can be called interlayer heat treatment process. Diamond films were deposited by a microwave plasma chemical vapor deposition system. Ti and Si interlayer are deposited by DC sputter and an E-gun, respectively. Film morphologies, interface structure and film qualify were examined by SEM, XRD, Auger electron spectroscopy and Raman spectroscopy. The residual stresses and adhesion strengths of the films were determined by Raman spectroscopy and indentation adhesion testing, respectively. Comparing the regular one-step diamond deposition process with the present two different new processes, the average dP/dX values, which are a measure of the adherence of the film, are 354 kgf/mm, 494 kgf/mm and 787 kgf/mm, respectively. In other words, the interlayer heat treatment process gives the best film adherence on average. For the two-step diamond deposition process, the interlayer thickness and the percent diamond surface coverage of the first diamond deposition step are the main parameters, and there exists an optimum Ti thickness and percent diamond coverage for the best film adherence. The main contribution to better film adherence is not a large difference in residual stress, but is due to the following reasons. The interlayer heat treatment can transform amorphous Si to polycrystalline Si, and may form strong TiC and SiC bonding. The polycrystalline Si and the diamond particles from the first diamond deposition step can be an effective seeds to enhance diamond nucleation. Published by Elsevier Science S.A.en_US
dc.language.isoen_USen_US
dc.subjectdiamond filmsen_US
dc.subjectheat treatmenten_US
dc.subjectinterlayeren_US
dc.subjectresidual stressen_US
dc.subjectdispersive strengtheningen_US
dc.titleApplication of heat treatment and dispersive strengthening concept in interlayer deposition to enhance diamond film adherenceen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0040-6090(97)00392-1en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume308en_US
dc.citation.issueen_US
dc.citation.spage273en_US
dc.citation.epage278en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000071553400052-
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