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dc.contributor.authorLai, Kelvin Yi-Tseen_US
dc.contributor.authorHe, Zih-Chengen_US
dc.contributor.authorYang, Yu-Taoen_US
dc.contributor.authorChang, Hsie-Chiaen_US
dc.contributor.authorLee, Chen-Yien_US
dc.date.accessioned2014-12-08T15:34:51Z-
dc.date.available2014-12-08T15:34:51Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4799-0277-4978-1-4799-0280-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/23718-
dc.description.abstractIn this paper, we propose a power/area-efficient capacitive readout circuit for the Micro-Electro-Mechanical Systems (MEMS) sensor of 3-axis accelerometer. The proposed architecture is different from other traditional structures by exploiting true capacitive-to-digital converter (CDC) without Analog-to-Digital Converter (ADC). The proposed CDC can differentiate the bidirectional 125KS/s 80-level accelerations between +/- 8g and support the 4-level adjustable resolutions of 0.1g/0.2g/0.4g/0.8g for each axis. The proposed readout circuit with 0.0354mm(2) area is fabricated in UMC 0.18um CMOS-MEMS process. Experimental results show power consumption is 50uW with 1.8V supply voltage for 1-axis (FOM=3.84pJ), 82uW for 3-axis (FOM=2.1pJ) under 125KHz of sampling frequency and 0.1g acceleration sensitivity for 0.2fF MEMS capacitance change.en_US
dc.language.isoen_USen_US
dc.titleA 0.0354mm(2) 82 mu W 125KS/s 3-Axis Readout Circuit for Capacitive MEMS Accelerometeren_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE 2013 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC)en_US
dc.citation.spage109en_US
dc.citation.epage112en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000330857500028-
Appears in Collections:Conferences Paper