完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lai, Kelvin Yi-Tse | en_US |
dc.contributor.author | He, Zih-Cheng | en_US |
dc.contributor.author | Yang, Yu-Tao | en_US |
dc.contributor.author | Chang, Hsie-Chia | en_US |
dc.contributor.author | Lee, Chen-Yi | en_US |
dc.date.accessioned | 2014-12-08T15:34:51Z | - |
dc.date.available | 2014-12-08T15:34:51Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.isbn | 978-1-4799-0277-4978-1-4799-0280-4 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/23718 | - |
dc.description.abstract | In this paper, we propose a power/area-efficient capacitive readout circuit for the Micro-Electro-Mechanical Systems (MEMS) sensor of 3-axis accelerometer. The proposed architecture is different from other traditional structures by exploiting true capacitive-to-digital converter (CDC) without Analog-to-Digital Converter (ADC). The proposed CDC can differentiate the bidirectional 125KS/s 80-level accelerations between +/- 8g and support the 4-level adjustable resolutions of 0.1g/0.2g/0.4g/0.8g for each axis. The proposed readout circuit with 0.0354mm(2) area is fabricated in UMC 0.18um CMOS-MEMS process. Experimental results show power consumption is 50uW with 1.8V supply voltage for 1-axis (FOM=3.84pJ), 82uW for 3-axis (FOM=2.1pJ) under 125KHz of sampling frequency and 0.1g acceleration sensitivity for 0.2fF MEMS capacitance change. | en_US |
dc.language.iso | en_US | en_US |
dc.title | A 0.0354mm(2) 82 mu W 125KS/s 3-Axis Readout Circuit for Capacitive MEMS Accelerometer | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | PROCEEDINGS OF THE 2013 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC) | en_US |
dc.citation.spage | 109 | en_US |
dc.citation.epage | 112 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000330857500028 | - |
顯示於類別: | 會議論文 |