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dc.contributor.authorChen, Wei-Chungen_US
dc.contributor.authorChen, Ke-Horngen_US
dc.contributor.authorWey, Chin-Longen_US
dc.contributor.authorLin, Ying-Hsien_US
dc.contributor.authorTsai, Tsung-Yenen_US
dc.contributor.authorHuang, Chen-Chihen_US
dc.contributor.authorLee, Chao-Chengen_US
dc.date.accessioned2014-12-08T15:34:51Z-
dc.date.available2014-12-08T15:34:51Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4799-0277-4978-1-4799-0280-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/23720-
dc.description.abstractfor high power universal serial bus (USB) devices, the dynamic bootstrap voltage (DBV) technique is proposed to keep high efficiency over a wide load range, including light and heavy loads. Besides, the silicon area of power management of the system-on-a-chip (Soc) can be effectively reduced to 50% of conventional design with P-type high-side power MOSFET. The test chip fabricated in 0.25 mu m CMOS process shows 92% peak efficiency from 1mA to 1A. The maximum driving current is higher than 3A with 88 % efficiency. Compared to that without the DBV technique, the efficiency is improved about 28%.en_US
dc.language.isoen_USen_US
dc.subjectdual N-type MOSFETsen_US
dc.subjectdynamic bootstrap capacitanceen_US
dc.subjectlight-load efficiencyen_US
dc.titleDynamic Bootstrap Voltage Technique for High Efficiency Buck Converter in Universal Serial Bus Power Device Supplying Systemen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE 2013 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC)en_US
dc.citation.spage165en_US
dc.citation.epage168en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:000330857500042-
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