完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Wei-Chung | en_US |
dc.contributor.author | Chen, Ke-Horng | en_US |
dc.contributor.author | Wey, Chin-Long | en_US |
dc.contributor.author | Lin, Ying-Hsi | en_US |
dc.contributor.author | Tsai, Tsung-Yen | en_US |
dc.contributor.author | Huang, Chen-Chih | en_US |
dc.contributor.author | Lee, Chao-Cheng | en_US |
dc.date.accessioned | 2014-12-08T15:34:51Z | - |
dc.date.available | 2014-12-08T15:34:51Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.isbn | 978-1-4799-0277-4978-1-4799-0280-4 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/23720 | - |
dc.description.abstract | for high power universal serial bus (USB) devices, the dynamic bootstrap voltage (DBV) technique is proposed to keep high efficiency over a wide load range, including light and heavy loads. Besides, the silicon area of power management of the system-on-a-chip (Soc) can be effectively reduced to 50% of conventional design with P-type high-side power MOSFET. The test chip fabricated in 0.25 mu m CMOS process shows 92% peak efficiency from 1mA to 1A. The maximum driving current is higher than 3A with 88 % efficiency. Compared to that without the DBV technique, the efficiency is improved about 28%. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | dual N-type MOSFETs | en_US |
dc.subject | dynamic bootstrap capacitance | en_US |
dc.subject | light-load efficiency | en_US |
dc.title | Dynamic Bootstrap Voltage Technique for High Efficiency Buck Converter in Universal Serial Bus Power Device Supplying System | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | PROCEEDINGS OF THE 2013 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC) | en_US |
dc.citation.spage | 165 | en_US |
dc.citation.epage | 168 | en_US |
dc.contributor.department | 電控工程研究所 | zh_TW |
dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
dc.identifier.wosnumber | WOS:000330857500042 | - |
顯示於類別: | 會議論文 |