標題: EFFECT OF BORON DOPING ON THE STRUCTURAL-PROPERTIES OF POLYCRYSTALLINE SILICON FILMS GROWN AT REDUCED PRESSURES
作者: LIN, HC
LIN, HY
CHANG, CY
JUNG, TG
WANG, PJ
DENG, RC
LIN, JD
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Aug-1994
摘要: The deposition and properties of in situ boron-doped polycrystalline silicon (poly-Si) films grown at 550-degrees-C were investigated using an ultrahigh vacuum chemical vapor deposition system. It is observed that, if the doping level is high enough, the boron incorporation would significantly reduce the deposition rate, impede the grain growth, and degrade the crystallinity of the poly-Si films. We also found that the preferential adsorption of boron atoms on the SiO2 surface at the initial stage of deposition shortened the incubation time of deposition. The property of trapping states at the grain boundary is also examined, and a density of about 4.7 X 10(12) CM-2 is obtained for poly-Si films with a doping level less than 2.2 X 10(19) cm-3.
URI: http://dx.doi.org/10.1063/1.357735
http://hdl.handle.net/11536/2372
ISSN: 0021-8979
DOI: 10.1063/1.357735
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 76
Issue: 3
起始頁: 1572
結束頁: 1577
Appears in Collections:Articles