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dc.contributor.authorKao, Chyuan Hauren_US
dc.contributor.authorChen, Hsiangen_US
dc.contributor.authorLee, Ming Lingen_US
dc.contributor.authorLiu, Che Chunen_US
dc.contributor.authorUeng, Herng-Yihen_US
dc.contributor.authorChu, Yu Chengen_US
dc.contributor.authorChen, Ching Bangen_US
dc.contributor.authorChang, Kow Mingen_US
dc.date.accessioned2014-12-08T15:34:56Z-
dc.date.available2014-12-08T15:34:56Z-
dc.date.issued2014-04-01en_US
dc.identifier.issn0925-4005en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.snb.2013.12.103en_US
dc.identifier.urihttp://hdl.handle.net/11536/23751-
dc.description.abstractA CeO2-based multi-analyte electrolyte-insulator-semiconductor (EIS) biosensor has been fabricated on silicon substrate. To enhance the material quality and sensing performance, annealing treatment in N-2 and O-2 ambient has been incorporated. To examine the annealing effects, material analyses were conducted using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) to identify optimal treatment conditions. Furthermore, sensing performance for various ions of Na+, K+, urea, and glucose has also been tested. Results indicate that the membrane annealed at 800 degrees C in O-2 ambience exhibited a better performance with higher multianalyte sensitivity and a lower drift rate compared with the membrane annealed in N-2 ambience. Oxygen in O-2 ambience may cause stronger reflow and fill in the oxygen vacancy so that the material properties and sensing capability can be improved in O-2 annealing ambience. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectCeO2en_US
dc.subjectO-2 and N-2 annealingen_US
dc.subjectElectrolyte-insulator-semiconductoren_US
dc.subjectMaterial qualityen_US
dc.subjectSensing performanceen_US
dc.titleEffects of N-2 and O-2 annealing on the multianalyte biosensing characteristics of CeO2-based electrolyte-insulator-semiconductor structuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.snb.2013.12.103en_US
dc.identifier.journalSENSORS AND ACTUATORS B-CHEMICALen_US
dc.citation.volume194en_US
dc.citation.issueen_US
dc.citation.spage503en_US
dc.citation.epage510en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000331575400066-
dc.citation.woscount0-
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