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dc.contributor.authorKrishnan, P. S. Sankara Ramaen_US
dc.contributor.authorMorozovska, Anna N.en_US
dc.contributor.authorEliseev, Eugene A.en_US
dc.contributor.authorRamasse, Quentin M.en_US
dc.contributor.authorKepaptsoglou, Demieen_US
dc.contributor.authorLiang, Wen-I.en_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorMunroe, Paulen_US
dc.contributor.authorNagarajan, V.en_US
dc.date.accessioned2014-12-08T15:35:01Z-
dc.date.available2014-12-08T15:35:01Z-
dc.date.issued2014-02-07en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4862556en_US
dc.identifier.urihttp://hdl.handle.net/11536/23791-
dc.description.abstractCation intermixing at functional oxide interfaces remains a highly controversial area directly relevant to interface-driven nanoelectronic device properties. Here, we systematically explore the cation intermixing in epitaxial (001) oriented multiferroic bismuth ferrite (BFO) grown on a (001) lanthanum aluminate (LAO) substrate. Aberration corrected dedicated scanning transmission electron microscopy and electron energy loss spectroscopy reveal that the interface is not chemically sharp, but with an intermixing of similar to 2 nm. The driving force for this process is identified as misfit-driven elastic strain. Landau-Ginzburg-Devonshire-based phenomenological theory was combined with the Sheldon and Shenoy formula in order to understand the influence of boundary conditions and depolarizing fields arising from misfit strain between the LAO substrate and BFO film. The theory predicts the presence of a strong potential gradient at the interface, which decays on moving into the bulk of the film. This potential gradient is significant enough to drive the cation migration across the interface, thereby mitigating the misfit strain. Our results offer new insights on how chemical roughening at oxide interfaces can be effective in stabilizing the structural integrity of the interface without the need for misfit dislocations. These findings offer a general formalism for understanding cation intermixing at highly strained oxide interfaces that are used in nanoelectronic devices. (C) 2014 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleMisfit strain driven cation inter-diffusion across an epitaxial multiferroic thin film interfaceen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4862556en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume115en_US
dc.citation.issue5en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000331645900064-
dc.citation.woscount1-
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