Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chu, Tian-Jian | en_US |
dc.contributor.author | Tsai, Tsung-Ming | en_US |
dc.contributor.author | Chang, Ting-Chang | en_US |
dc.contributor.author | Chang, Kuan-Chang | en_US |
dc.contributor.author | Zhang, Rui | en_US |
dc.contributor.author | Chen, Kai-Huang | en_US |
dc.contributor.author | Chen, Jung-Hui | en_US |
dc.contributor.author | Young, Tai-Fa | en_US |
dc.contributor.author | Huang, Jen-Wei | en_US |
dc.contributor.author | Lou, Jen-Chung | en_US |
dc.contributor.author | Chen, Min-Chen | en_US |
dc.contributor.author | Huang, Syuan-Yong | en_US |
dc.contributor.author | Chen, Hsin-Lu | en_US |
dc.contributor.author | Syu, Yong-En | en_US |
dc.contributor.author | Bao, Dinghua | en_US |
dc.contributor.author | Sze, Simon M. | en_US |
dc.date.accessioned | 2014-12-08T15:35:05Z | - |
dc.date.available | 2014-12-08T15:35:05Z | - |
dc.date.issued | 2014-02-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2013.2295378 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/23808 | - |
dc.description.abstract | In this letter, the special role of hydrogen ions in hafnium doped silicon oxide resistive random access memory (RRAM) is presented. In addition to the more typical oxygen ion-dominated resistive switching, hydrogen ions were also observed to trigger a resistance transformation phenomenon, producing a tri-resistive device. Unlike a normal RRAM device, a hydrogen plasma-treated device is operated with a reversed voltage polarity, and the direction of hydrogen ion migration results in the chemical bonds breaking and repairing. By changing the voltage polarity and stop voltage, this tri-resistive behavior can be achieved. This particular hydrogen-induced switching behavior suggests a different RRAM switching mechanism and is finally explained by our model. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | RRAM | en_US |
dc.subject | hydrogen | en_US |
dc.subject | resistive switching | en_US |
dc.subject | tri-resistive states | en_US |
dc.title | Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2013.2295378 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 35 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 217 | en_US |
dc.citation.epage | 219 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000331377500023 | - |
dc.citation.woscount | 7 | - |
Appears in Collections: | Articles |
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