完整後設資料紀錄
DC 欄位語言
dc.contributor.authorCheng, Cheng-Enen_US
dc.contributor.authorPei, Zingwayen_US
dc.contributor.authorHsu, Chia-Chenen_US
dc.contributor.authorChang, Chen-Shiungen_US
dc.contributor.authorChien, Forest Shih-Senen_US
dc.date.accessioned2014-12-08T15:35:06Z-
dc.date.available2014-12-08T15:35:06Z-
dc.date.issued2014-02-01en_US
dc.identifier.issn0927-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.solmat.2013.10.017en_US
dc.identifier.urihttp://hdl.handle.net/11536/23820-
dc.description.abstractThe electrical properties of polymer solar cells (PSCs) with gold nanoparticles (AuNPs) embedded in the hole transport layers (Hits) were investigated. The PSCs with AuNP-embedded HTLs exhibited 8%, 9.5%, and 22% enhancement in short-circuit current density, open-circuit voltage, and power conversion efficiency, respectively. The low contact resistance at the active layer/Hit interface resulted in the high collection efficiency and low electron-hole recombination. The downshift of the Fermi energy in AuNP-embedded HTLs lowered the energy barrier and thinned the depletion layer at the active layer/HTL interface, accounting for the enhanced collection efficiency. (C) 2013 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectPolymer solar cellsen_US
dc.subjectGold nanoparticlesen_US
dc.subjectHole transiten_US
dc.subjectImpedance spectroscopyen_US
dc.titleHole transit in P3HT:PCBM solar cells with embedded gold nanoparticlesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.solmat.2013.10.017en_US
dc.identifier.journalSOLAR ENERGY MATERIALS AND SOLAR CELLSen_US
dc.citation.volume121en_US
dc.citation.issueen_US
dc.citation.spage80en_US
dc.citation.epage84en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000331478300013-
dc.citation.woscount3-
顯示於類別:期刊論文


文件中的檔案:

  1. 000331478300013.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。