標題: Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer
作者: Lin, Bing-Cheng
Chen, Kuo-Ju
Wang, Chao-Hsun
Chiu, Ching-Hsueh
Lan, Yu-Pin
Lin, Chien-Chung
Lee, Po-Tsung
Shih, Min-Hsiung
Kuo, Yen-Kuang
Kuo, Hao-Chung
光電工程學系
Department of Photonics
公開日期: 13-一月-2014
摘要: A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design. (C)2014 Optical Society of America
URI: http://dx.doi.org/10.1364/OE.22.000463
http://hdl.handle.net/11536/23839
ISSN: 1094-4087
DOI: 10.1364/OE.22.000463
期刊: OPTICS EXPRESS
Volume: 22
Issue: 1
起始頁: 463
結束頁: 469
顯示於類別:期刊論文


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