SUBMICRON T-SHAPED GATE HEMT FABRICATION USING DEEP-UV LITHOGRAPHY

doi:10.1109/55.296215

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHANG, EY	en_US
dc.contributor.author	LIN, KC	en_US
dc.contributor.author	LIU, EH	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	CHEN, TH	en_US
dc.contributor.author	CHEN, J	en_US
dc.date.accessioned	2014-12-08T15:03:51Z	-
dc.date.available	2014-12-08T15:03:51Z	-
dc.date.issued	1994-08-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.296215	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2385	-
dc.description.abstract	A new combination of low/high/low sensitivity trilayer (PMMA/PMIPK/PMMA) resist system was used for deep UV lithography to fabricate submicron T-shaped gate. Gate length as narrow as 0.2 mum is achieved. The GaAs HEMT's with 0.3 mum T-shaped Ti/Pt/Au gate is fabricated using this technology. The HEMT demonstrated a 0.6 dB noise figure and 13 dB associated gain at 10 GHz. This deep UV lithography process provides a high throughput and low cost alternative to E-beam lithography for submicron T-gate fabrication.	en_US
dc.language.iso	en_US	en_US
dc.title	SUBMICRON T-SHAPED GATE HEMT FABRICATION USING DEEP-UV LITHOGRAPHY	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.296215	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	15	en_US
dc.citation.issue	8	en_US
dc.citation.spage	277	en_US
dc.citation.epage	279	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1994PB03100005	-
dc.citation.woscount	10	-
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