標題: Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance
作者: Chiu, Yu-Sheng
Lin, Tai-Ming
Nguyen, Hong-Quan
Weng, Yu-Chen
Nguyen, Chi-Lang
Lin, Yueh-Chin
Yu, Hung-Wei
Chang, Edward Yi
Lee, Ching-Ting
材料科學與工程學系
照明與能源光電研究所
Department of Materials Science and Engineering
Institute of Lighting and Energy Photonics
公開日期: 1-Jan-2014
摘要: Optimizing surface morphology of ohmic contacts on GaN high electron mobility transistors continues to be a challenge in the GaN electronics industry. In this study, a variety of metal schemes were tested under various annealing conditions to obtain contacts with optimal qualities. A Ti/Al/Ti/Ni/Au (20/120/40/60/50 nm) metal scheme demonstrated the lowest contact resistance (R-c) and a smooth surface morphology, and the mechanisms were investigated by materials analysis. A Ti/Al/Ti/Ni/Au metal scheme with optimized Ti and Ni thicknesses can result in formation of a larger proportion of Al-Ni intermetallics and a continuous TiN interlayer, which results in smooth surface and low R-c. (C) 2014 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.4862165
http://hdl.handle.net/11536/23870
ISSN: 1071-1023
DOI: 10.1116/1.4862165
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 32
Issue: 1
結束頁: 
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