Effects of underlying films on the chemical-mechanical polishing for shallow trench isolation technology

標題:	Effects of underlying films on the chemical-mechanical polishing for shallow trench isolation technology
作者:	Wang, YL Liu, C Feng, MS Dun, JW Chou, KS 材料科學與工程學系電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics
關鍵字:	chemical-mechanical polishing;shallow trench isolation technology
公開日期:	31-Oct-1997
摘要:	The effects of underlying films on the chemical-mechanical polishing (CMP) removal rate have been studied and characterized. A model for the underlying film mechanical properties such as hardness and Young's modulus, relating to the polishing removal rate was proposed. In addition, a modified shallow trench isolation (STI) process with a thin nitride overcoat has been suggested to eliminate the dishing and oxide remaining on nitride issues. Furthermore, in order to minimize the residual particles and metallic contamination, a modified multi-chemical spray-cleaning process provided for the post-STI CMP cleaning was also studied. (C) 1997 Elsevier Science S.A.
URI:	http://dx.doi.org/10.1016/S0040-6090(97)00490-2 http://hdl.handle.net/11536/239
ISSN:	0040-6090
DOI:	10.1016/S0040-6090(97)00490-2
期刊:	THIN SOLID FILMS
Volume:	308
Issue:
起始頁:	543
結束頁:	549
Appears in Collections:	Conferences Paper

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