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dc.contributor.authorHuang, Yan-Pinen_US
dc.contributor.authorTzeng, Ruoh-Ningen_US
dc.contributor.authorChien, Yu-Sanen_US
dc.contributor.authorShy, Ming-Shawen_US
dc.contributor.authorLin, Teu-Huaen_US
dc.contributor.authorChen, Kou-Huaen_US
dc.contributor.authorChuang, Ching-Teen_US
dc.contributor.authorHwang, Weien_US
dc.contributor.authorChiu, Chi-Tsungen_US
dc.contributor.authorTong, Ho-Mingen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2014-12-08T15:35:16Z-
dc.date.available2014-12-08T15:35:16Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4673-6484-3en_US
dc.identifier.issn2164-0157en_US
dc.identifier.urihttp://hdl.handle.net/11536/23908-
dc.description.abstractThree types of bonding, including Cu-In, Sn/In-Cu, and Cu/Ti-Ti/Cu, are investigated for the application of 3D interconnects. Cu-In bonding and Sn/In-Cu bonding can form intermetallic compounds at the bonding temperature lower than 180 degrees C. In addition, for Cu/Ti-Ti/Cu bonding, Cu can be protected from oxidation by capping Ti on Cu surface before bonding. This method can further decrease bonding temperature. All bonded structures have shown excellent electrical performance and reliability characteristics. Based on bond results, these structures can be applied for low temperature bonding in 3D interconnects.en_US
dc.language.isoen_USen_US
dc.subjectBonding technologyen_US
dc.subject3D integrationen_US
dc.subjectinterconnectsen_US
dc.titleLow Temperature (< 180 degrees C) Bonding for 3D Integrationen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000333258200006-
Appears in Collections:Conferences Paper


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