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dc.contributor.authorLiu, Jia-Zheen_US
dc.contributor.authorCharlton, Martin D. B.en_US
dc.contributor.authorLin, Chung-Hsiangen_US
dc.contributor.authorLee, Kang-Yuanen_US
dc.contributor.authorKrishnan, Chirenjeevien_US
dc.contributor.authorWu, Meng-Chyien_US
dc.date.accessioned2014-12-08T15:35:18Z-
dc.date.available2014-12-08T15:35:18Z-
dc.date.issued2014-05-01en_US
dc.identifier.issn0018-9197en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JQE.2014.2309137en_US
dc.identifier.urihttp://hdl.handle.net/11536/23939-
dc.description.abstractIn this paper, we investigate the efficiency enhancement of blue InGaN/GaN light-emitting diodes (LEDs) by incorporating a burried air void photonic crystal (BAVPC) layer within the epitaxial structure. As compared with the conventional patterned sapphire substrate (C-PSS) LEDs and flat sapphire substrate LEDs with BAVPC, the fabricated patterned sapphire substrate (PSS) LEDs with BAVPC exhibit the lowest full-width at half-maximum of (002) and (102) diffraction peaks, the highest light output power of 20.6 mW, and the highest external quantum efficiency of 37.4%. Remarkable performance improvement in the PSS LED with BAVPC is attributed to the better epitaxial quality with threading dislocations terminated by the BAVPC and the higher scattering at interface between GaN and air-void. By positioning the BAVPC directly below the multiple quantum wells (MQWs), it would cause the reduction in the number of trapped optical modes. The methodology optically isolates the MQWs from the underlying substrate and increases the optical output power. Moreover, threading dislocations are significantly suppressed using the BAVPC with high air filling fraction of similar to 50%. It is well proposed that this methodology provides a promising alternative to C-PSS LEDs.en_US
dc.language.isoen_USen_US
dc.subjectLight-emitting diode (LED)en_US
dc.subjectburried air void photonic crystal (BAVPC)en_US
dc.subjectpatterned sapphire substrate (PSS)en_US
dc.subjectnanoimprint lithography (NIL)en_US
dc.titleEfficiency Improvement of Blue LEDs Using a GaN Burried Air Void Photonic Crystal With High Air Filling Fractionen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JQE.2014.2309137en_US
dc.identifier.journalIEEE JOURNAL OF QUANTUM ELECTRONICSen_US
dc.citation.volume50en_US
dc.citation.issue5en_US
dc.citation.spage314en_US
dc.citation.epage320en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000333305600002-
dc.citation.woscount1-
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