Full metadata record
DC FieldValueLanguage
dc.contributor.authorCHEN, WKen_US
dc.contributor.authorCHANG, CSen_US
dc.contributor.authorCHEN, WCen_US
dc.date.accessioned2014-12-08T15:03:52Z-
dc.date.available2014-12-08T15:03:52Z-
dc.date.issued1994-08-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/2393-
dc.description.abstractThe low-temperature (LT) epitaxial growth of high quality GaAs films is achieved by using triethylgallium and tertiarybutylarsine as the precursors. Without any external work, the deposition can be conducted at a temperature as low as 350-degrees-C in a conventional metalorganic chemical vapor deposition system. The full width at half-maximum of 77 K photoluminescence and X-ray rocking curve for a sample grown at 425-degrees-C are 8.2 meV and 14 arcsec, respectively. Materials with good electrical properties were also obtained. A Schottky diode formed on the LT CaAs epilayer shows a barrier height of 0.83 eV, and a reverse saturation current of 1.1 X 10(-7) A/cm2, comparable to that of a normal GaAs Schottky diode.en_US
dc.language.isoen_USen_US
dc.subjectLOW-TEMPERATURE EPITAXYen_US
dc.subjectGAASen_US
dc.subjectMOCVDen_US
dc.titleLOW-TEMPERATURE EPITAXY OF GAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITIONen_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume33en_US
dc.citation.issue8Aen_US
dc.citation.spageL1052en_US
dc.citation.epageL1055en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:A1994PC13300002-
dc.citation.woscount1-
Appears in Collections:Articles