標題: | Low-Temperature Bonded Cu/In Interconnect With High Thermal Stability for 3-D Integration |
作者: | Chien, Yu-San Huang, Yan-Pin Tzeng, Ruoh-Ning Shy, Ming-Shaw Lin, Teu-Hua Chen, Kou-Hua Chiu, Chi-Tsung Chuang, Ching-Te Hwang, Wei Chiou, Jin-Chern Tong, Ho-Ming Chen, Kuan-Neng 交大名義發表 電子工程學系及電子研究所 National Chiao Tung University Department of Electronics Engineering and Institute of Electronics |
關鍵字: | 3-D integration;Cu/In bonding;interconnect |
公開日期: | 1-四月-2014 |
摘要: | Low-temperature (170 degrees C) Cu/In wafer-level and chip-level bonding for good thermal budget has been successfully developed for 3-D integration applications. For the well-bonded interconnect, Cu2In and Cu7In3 phases with high melting temperature of 388.3 degrees C and 632.2 degrees C can be formed, indicating high thermal stability. In addition, stable low specific contact resistance of bonded interfaces can be achieved with the values of approximately 0.3 x 10(-8) Omega-cm(2). In addition to exceptional electrical characteristics, the results of electrical reliability assessments including current stressing, temperature cycling, and unbiased HAST show excellent stability of Cu/In bonds without obvious deterioration. The low-temperature Cu/In bonding technology presents good bond quality and electrical performance, and possesses a great potential for future applications of 3-D interconnects. |
URI: | http://dx.doi.org/10.1109/TED.2014.2304778 http://hdl.handle.net/11536/23951 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2014.2304778 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 61 |
Issue: | 4 |
起始頁: | 1131 |
結束頁: | 1136 |
顯示於類別: | 期刊論文 |