標題: High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells
作者: Chang, Chiao-Yun
Li, Hen
Lu, Tien-Chang
光電工程學系
Department of Photonics
公開日期: 3-Mar-2014
摘要: In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20mA and a 27.0% efficiency droop at 100mA (corresponding to a current density of 69A/cm(2)), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs. (C) 2014 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4867023
http://hdl.handle.net/11536/23991
ISSN: 0003-6951
DOI: 10.1063/1.4867023
期刊: APPLIED PHYSICS LETTERS
Volume: 104
Issue: 9
結束頁: 
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