完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, YL | en_US |
dc.contributor.author | Liu, C | en_US |
dc.contributor.author | Feng, MS | en_US |
dc.contributor.author | Dun, JW | en_US |
dc.contributor.author | Chou, KS | en_US |
dc.date.accessioned | 2014-12-08T15:01:23Z | - |
dc.date.available | 2014-12-08T15:01:23Z | - |
dc.date.issued | 1997-10-31 | en_US |
dc.identifier.issn | 0040-6090 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/S0040-6090(97)00490-2 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/239 | - |
dc.description.abstract | The effects of underlying films on the chemical-mechanical polishing (CMP) removal rate have been studied and characterized. A model for the underlying film mechanical properties such as hardness and Young's modulus, relating to the polishing removal rate was proposed. In addition, a modified shallow trench isolation (STI) process with a thin nitride overcoat has been suggested to eliminate the dishing and oxide remaining on nitride issues. Furthermore, in order to minimize the residual particles and metallic contamination, a modified multi-chemical spray-cleaning process provided for the post-STI CMP cleaning was also studied. (C) 1997 Elsevier Science S.A. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | chemical-mechanical polishing | en_US |
dc.subject | shallow trench isolation technology | en_US |
dc.title | Effects of underlying films on the chemical-mechanical polishing for shallow trench isolation technology | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/S0040-6090(97)00490-2 | en_US |
dc.identifier.journal | THIN SOLID FILMS | en_US |
dc.citation.volume | 308 | en_US |
dc.citation.issue | en_US | |
dc.citation.spage | 543 | en_US |
dc.citation.epage | 549 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000071553400100 | - |
顯示於類別: | 會議論文 |