標題: Effects of underlying films on the chemical-mechanical polishing for shallow trench isolation technology
作者: Wang, YL
Liu, C
Feng, MS
Dun, JW
Chou, KS
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: chemical-mechanical polishing;shallow trench isolation technology
公開日期: 31-十月-1997
摘要: The effects of underlying films on the chemical-mechanical polishing (CMP) removal rate have been studied and characterized. A model for the underlying film mechanical properties such as hardness and Young's modulus, relating to the polishing removal rate was proposed. In addition, a modified shallow trench isolation (STI) process with a thin nitride overcoat has been suggested to eliminate the dishing and oxide remaining on nitride issues. Furthermore, in order to minimize the residual particles and metallic contamination, a modified multi-chemical spray-cleaning process provided for the post-STI CMP cleaning was also studied. (C) 1997 Elsevier Science S.A.
URI: http://dx.doi.org/10.1016/S0040-6090(97)00490-2
http://hdl.handle.net/11536/239
ISSN: 0040-6090
DOI: 10.1016/S0040-6090(97)00490-2
期刊: THIN SOLID FILMS
Volume: 308
Issue: 
起始頁: 543
結束頁: 549
顯示於類別:會議論文


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