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dc.contributor.authorWu, Tzeng Tsongen_US
dc.contributor.authorChen, Hao Wenen_US
dc.contributor.authorLan, Yu Pinen_US
dc.contributor.authorLu, Tien Changen_US
dc.contributor.authorWang, Shing Chungen_US
dc.date.accessioned2014-12-08T15:35:32Z-
dc.date.available2014-12-08T15:35:32Z-
dc.date.issued2014-02-10en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.22.002317en_US
dc.identifier.urihttp://hdl.handle.net/11536/24034-
dc.description.abstractWe demonstrated GaN-based photonic crystal (PC) nanobeam cavities by using the e-beam lithography and the suspended nanobeams were realized by focused-ion beam (FIB) milling. One resonant mode was clearly observed at 411.7 nm at 77K by optical pumping. The quality factor was measured to be to 7.4 x 10(2). Moreover, the degree of polarization value was measured to be 40%. The temperature-dependent characteristics were measured and discussed, which unambiguously demonstrated that the observed resonant peak originated from the band-edge mode of the one-dimensional PC nanobeam. (C) 2014 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleSuspended GaN-based band-edge type photonic crystal nanobeam cavitiesen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.22.002317en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume22en_US
dc.citation.issue3en_US
dc.citation.spage2317en_US
dc.citation.epage2323en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000332518100017-
dc.citation.woscount0-
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