Carrier Dynamics in InN Nanorod Arrays

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DC Field	Value	Language
dc.contributor.author	Su, S. -H.	en_US
dc.contributor.author	Yu, C. -C.	en_US
dc.contributor.author	Gwo, S.	en_US
dc.contributor.author	Ahn, H.	en_US
dc.date.accessioned	2014-12-08T15:35:43Z	-
dc.date.available	2014-12-08T15:35:43Z	-
dc.date.issued	2013	en_US
dc.identifier.isbn	978-1-4673-6476-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/24111	-
dc.description.abstract	A fast initial decay was observed from InN nanorods with similar to 30 nm diameter, the lifetime of which is much shorter than the carrier cooling time, demonstrating the substantial surface-associated influence on carrier relaxation in nanorods.	en_US
dc.language.iso	en_US	en_US
dc.title	Carrier Dynamics in InN Nanorod Arrays	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR)	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000334176100603	-
Appears in Collections:	Conferences Paper