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dc.contributor.authorChang, Ming-Hungen_US
dc.contributor.authorLin, Shang-Yuanen_US
dc.contributor.authorWu, Pei-Chenen_US
dc.contributor.authorZakoretska, Olesyaen_US
dc.contributor.authorChuang, Ching-Teen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.contributor.authorWang, Chen-Chaoen_US
dc.contributor.authorChen, Kua-Huaen_US
dc.contributor.authorChiu, Chi-Tsungen_US
dc.contributor.authorTong, Ho-Mingen_US
dc.contributor.authorHwang, Weien_US
dc.date.accessioned2014-12-08T15:35:44Z-
dc.date.available2014-12-08T15:35:44Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4673-5762-3; 978-1-4673-5760-9en_US
dc.identifier.issn0271-4302en_US
dc.identifier.urihttp://hdl.handle.net/11536/24128-
dc.description.abstractA process, voltage and temperature (PVT) sensors with dynamic voltage selection are proposed for environmental management in the ultra-low voltage dynamic voltage and frequency scaling (DVFS) system. The process and voltage (PV) sensors initially monitor the process variation. With known process information, PV sensors can real-time provide voltage variation status. The temperature sensor has six temperature sensitive ring oscillators (TSROs) generating frequency proportional to temperature. It dynamically selects the proper TSRO to convert the frequency into digital readings according to voltage status provided by PV sensors. With known process and voltage information from PV sensors, a pure temperature measurement result can be obtained. The proposed PVT sensors are designed in TSMC 65nm CMOS technology. This work can be dynamically operated over an ultra-low voltage range from 0.25V to 0.5V. Only 2.3 mu W is consumed at 0.25V. They can achieve 0.15 degrees C resolution and 50k samples/sec conversion rate.en_US
dc.language.isoen_USen_US
dc.subjectProcessen_US
dc.subjectvoltageen_US
dc.subjecttemperature (PVT) variationsen_US
dc.subjecttemperature sensoren_US
dc.subjectnear-threshold circuiten_US
dc.subjectsub-threshold circuiten_US
dc.titleNear-/Sub-V-th Process, Voltage, and Temperature (PVT) Sensors with Dynamic Voltage Selectionen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)en_US
dc.citation.spage133en_US
dc.citation.epage136en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000332006800034-
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