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dc.contributor.authorLin, Shiuan Hueien_US
dc.contributor.authorCho, Sheng-Lungen_US
dc.contributor.authorLin, June-Huaen_US
dc.contributor.authorHsu, Ken Y.en_US
dc.contributor.authorChi, Sienen_US
dc.date.accessioned2014-12-08T15:35:48Z-
dc.date.available2014-12-08T15:35:48Z-
dc.date.issued2014-06-01en_US
dc.identifier.issn0030-4018en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.optcom.2014.01.024en_US
dc.identifier.urihttp://hdl.handle.net/11536/24188-
dc.description.abstractIn this paper, we experimentally investigate the influence of the fabrication conditions on holographic characteristics in phenanthrenequinone-doped poly(methyl methacrylate) (PQ:PMMA) bulk photopolymer. In our investigation, the PQ:PMMA bulk samples are fabricated by use of a two-step thermopolymerization method. We firstly propose to monitor relative viscosity of the monomer solution during the sample preparation to obtain a reliable criterion for material fabrication. We then compare experimentally characteristics of 2-mm thick samples fabricated with different conditions for holographic memory. The results show that the conditions in the first step play a important rule for fabricating bulk PQ:PMMA samples with good optical uniformity. In addition, the conditions in the second step play the rule for controlling the concentration of residual monomer and determine holographic characteristics. These results can provide a useful rule for fabricating bulk PQ:PMMA photopolymers for further applications on volume holographic data storage. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectVolume Holographyen_US
dc.subjectOptical storage materialsen_US
dc.subjectPhotopolymeren_US
dc.titleInfluence of fabrication conditions on characteristics of phenanthrenequinone-doped poly(methyl methacrylate) photopolymer for holographic memoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.optcom.2014.01.024en_US
dc.identifier.journalOPTICS COMMUNICATIONSen_US
dc.citation.volume320en_US
dc.citation.issueen_US
dc.citation.spage145en_US
dc.citation.epage150en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000333791300025-
dc.citation.woscount0-
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