標題: | Improved Efficiency of a Large-Area Cu(In,Ga)Se-2 Solar Cell by a Nontoxic Hydrogen-Assisted Solid Se Vapor Selenization Process |
作者: | Wu, Tsung-Ta Hu, Fan Huang, Jyun-Hong Chang, Chia-ho Lai, Chih-chung Yen, Yu-Ting Huang, Hou-Ying Hong, Hwen-Fen Wang, Zhiming M. Shen, Chang-Hong Shieh, Jia-Min Chueh, Yu-Lun 光電學院 影像與生醫光電研究所 College of Photonics Institute of Imaging and Biomedical Photonics |
關鍵字: | Cu(In,Ga)Se-2;hydrogen-assisted selenization;buried homojunction;Na diffusion |
公開日期: | 9-四月-2014 |
摘要: | A nontoxic hydrogen-assisted solid Se vapor selenization process (HASVS) technique to achieve a large-area (40 X 30 cm(2)) Cu(In,Ga)Se-2 (CIGS) solar panel with enhanced efficiencies from 7.1 to 10.8% (12.0% for active area) was demonstrated. The remarkable improvement of efficiency and fill factor comes from improved open circuit voltage (V-oc) and reduced dark current due to (1) decreased interface recombination raised from the formation of a widened buried homojunction with n-type Cd-cu participation and (2) enhanced separation of electron and hole carriers resulting from the accumulation of Na atoms on the surface of the CIGS film. The effects of microstructural, compositional, and electrical characteristics with hydrogen-assisted Se vapor selenization, including interdiffusion of atoms and formation of buried homojunction, were examined in detail. This methodology can be also applied to CIS (CuInSe2) thin film solar cells with enhanced efficiencies from 5.3% to 8.5% (9.4% for active area) and provides a facile approach to improve quality of CIGS and stimulate the nontoxic progress in the large scale CIGS PV industry. |
URI: | http://dx.doi.org/10.1021/am405780z http://hdl.handle.net/11536/24240 |
ISSN: | 1944-8244 |
DOI: | 10.1021/am405780z |
期刊: | ACS APPLIED MATERIALS & INTERFACES |
Volume: | 6 |
Issue: | 7 |
起始頁: | 4842 |
結束頁: | 4849 |
顯示於類別: | 期刊論文 |