完整後設資料紀錄
DC 欄位語言
dc.contributor.authorYamamoto, Mahitoen_US
dc.contributor.authorWang, Sheng Tsungen_US
dc.contributor.authorNi, Meiyanen_US
dc.contributor.authorLin, Yen-Fuen_US
dc.contributor.authorLi, Song-Linen_US
dc.contributor.authorAikawa, Shinyaen_US
dc.contributor.authorJian, Wen-Binen_US
dc.contributor.authorUeno, Keijien_US
dc.contributor.authorWakabayashi, Katsunorien_US
dc.contributor.authorTsukagoshi, Kazuhitoen_US
dc.date.accessioned2014-12-08T15:35:52Z-
dc.date.available2014-12-08T15:35:52Z-
dc.date.issued2014-04-01en_US
dc.identifier.issn1936-0851en_US
dc.identifier.urihttp://dx.doi.org/10.1021/nn5007607en_US
dc.identifier.urihttp://hdl.handle.net/11536/24246-
dc.description.abstractTwo-dimensional layered crystals could show phonon properties that are markedly distinct from those of their bulk counterparts, because of the loss of periodicities along the c-axis directions. Here we investigate the phonon properties of bulk and atomically thin alpha-MoTe2 using Raman spectroscopy. The Raman spectrum of alpha-MoTe2 shows a prominent peak of the in-plane E-2g(1) mode, with its frequency upshifting with decreasing thickness down to the atomic scale, similar to other dichalcogenides. Furthermore, we find large enhancement of the Raman scattering from the out-of-plane B-2g(1) mode in the atomically thin layers. The B-2g(1) models Raman inactive in the bulk, but is observed to become active in the few-layer films. The intensity ratio of the B-2g(1) to E-2g(1) peaks evolves significantly with decreasing thickness, in contrast with other dichalcogenides. Our observations point to strong effects of dimensionality on the phonon properties of MoTe2.en_US
dc.language.isoen_USen_US
dc.subjecttransition metal dichalcogenidesen_US
dc.subjectRaman spectroscopyen_US
dc.subjectdensity functional theoryen_US
dc.subjectmolybdenum ditellurideen_US
dc.subjectMoS2en_US
dc.subjectMoSe2en_US
dc.subjectWSe2en_US
dc.titleStrong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2en_US
dc.typeArticleen_US
dc.identifier.doi10.1021/nn5007607en_US
dc.identifier.journalACS NANOen_US
dc.citation.volume8en_US
dc.citation.issue4en_US
dc.citation.spage3895en_US
dc.citation.epage3903en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000334990600087-
dc.citation.woscount4-
顯示於類別:期刊論文


文件中的檔案:

  1. 000334990600087.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。