標題: Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors
作者: Liu, Kuan-Hsien
Chang, Ting-Chang
Wu, Ming-Siou
Hung, Yi-Syuan
Hung, Pei-Hua
Hsieh, Tien-Yu
Chou, Wu-Ching
Chu, Ann-Kuo
Sze, Simon M.
Yeh, Bo-Liang
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
公開日期: 31-三月-2014
摘要: This Letter investigates abnormal channel width-dependent threshold voltage variation in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Unlike drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, the wider the channel, the larger the threshold voltage observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider channel devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast IV measurement is utilized to demonstrate the self-heating induced anomalous channel width-dependent threshold voltage variation. (C) 2014 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4868430
http://hdl.handle.net/11536/24277
ISSN: 0003-6951
DOI: 10.1063/1.4868430
期刊: APPLIED PHYSICS LETTERS
Volume: 104
Issue: 13
結束頁: 
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