標題: | Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors |
作者: | Liu, Kuan-Hsien Chang, Ting-Chang Wu, Ming-Siou Hung, Yi-Syuan Hung, Pei-Hua Hsieh, Tien-Yu Chou, Wu-Ching Chu, Ann-Kuo Sze, Simon M. Yeh, Bo-Liang 電子物理學系 電子工程學系及電子研究所 Department of Electrophysics Department of Electronics Engineering and Institute of Electronics |
公開日期: | 31-三月-2014 |
摘要: | This Letter investigates abnormal channel width-dependent threshold voltage variation in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Unlike drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, the wider the channel, the larger the threshold voltage observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider channel devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast IV measurement is utilized to demonstrate the self-heating induced anomalous channel width-dependent threshold voltage variation. (C) 2014 AIP Publishing LLC. |
URI: | http://dx.doi.org/10.1063/1.4868430 http://hdl.handle.net/11536/24277 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4868430 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 104 |
Issue: | 13 |
結束頁: | |
顯示於類別: | 期刊論文 |