标题: | Investigation of Backgate-Bias Dependence of Threshold-Voltage Sensitivity to Process and Temperature Variations for Ultra-Thin-Body Hetero-Channel MOSFETs |
作者: | Yu, Chang-Hung Su, Pin 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | Backgate bias;germanium-on-insulator (GeOI);InGaAs-OI;process variation;quantum confinement (QC);temperature variation;ultra-thin-body (UTB) |
公开日期: | 1-三月-2014 |
摘要: | This paper investigates the impact of backgate bias (V-bg) on the sensitivity of threshold voltage (V-th) to process and temperature variations for ultra-thin-body (UTB) GeOI and InGaAs-OI MOSFETs. Our study indicates that the quantum-confinement effect significantly suppresses the V-bg dependence of the V-th sensitivity to process and temperature variations. Since Si, Ge, and InGaAs channels exhibit different degrees of quantum confinement, the impact of quantum confinement has to be considered when one-to-one comparisons among hetero-channel UTB devices regarding variability are made. Our study is crucial to the robustness of multi-V-th designs with advanced UTB technologies. |
URI: | http://dx.doi.org/10.1109/TDMR.2013.2262115 http://hdl.handle.net/11536/24292 |
ISSN: | 1530-4388 |
DOI: | 10.1109/TDMR.2013.2262115 |
期刊: | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY |
Volume: | 14 |
Issue: | 1 |
起始页: | 375 |
结束页: | 381 |
显示于类别: | Articles |
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