标题: Investigation of Backgate-Bias Dependence of Threshold-Voltage Sensitivity to Process and Temperature Variations for Ultra-Thin-Body Hetero-Channel MOSFETs
作者: Yu, Chang-Hung
Su, Pin
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: Backgate bias;germanium-on-insulator (GeOI);InGaAs-OI;process variation;quantum confinement (QC);temperature variation;ultra-thin-body (UTB)
公开日期: 1-三月-2014
摘要: This paper investigates the impact of backgate bias (V-bg) on the sensitivity of threshold voltage (V-th) to process and temperature variations for ultra-thin-body (UTB) GeOI and InGaAs-OI MOSFETs. Our study indicates that the quantum-confinement effect significantly suppresses the V-bg dependence of the V-th sensitivity to process and temperature variations. Since Si, Ge, and InGaAs channels exhibit different degrees of quantum confinement, the impact of quantum confinement has to be considered when one-to-one comparisons among hetero-channel UTB devices regarding variability are made. Our study is crucial to the robustness of multi-V-th designs with advanced UTB technologies.
URI: http://dx.doi.org/10.1109/TDMR.2013.2262115
http://hdl.handle.net/11536/24292
ISSN: 1530-4388
DOI: 10.1109/TDMR.2013.2262115
期刊: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 14
Issue: 1
起始页: 375
结束页: 381
显示于类别:Articles


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