標題: | Numerical Analysis on Current and Optical Confinement of III-Nitride Vertical-Cavity Surface-Emitting Lasers |
作者: | Lai, Ying-Yu Lu, Tien-Chang Ho, Tsung-Lin Huang, Shen-Che Wang, Shing-Chung 光電工程學系 Department of Photonics |
關鍵字: | III-nitride;VCSELs;ITO;Buried AlN current apertures;current crowding;lateral index guiding |
公開日期: | 2014 |
摘要: | We report on the numerical analysis of the electrical and optical properties of current-injected III-N based vertical-cavity surface-emitting lasers (VCSELs) with three types of current confinement schemes: the conventional planar-Indium Tin Oxide (ITO) type, the AlN-buried type without ITO, and the hybrid type. The proposed hybrid structure, which combines an ITO layer and an intracavity AlN aperture, exhibits not only a uniform current distribution but also an enhanced lateral optical confinement. Thus, the hybrid type design shows a remarkably better performance including lower threshold current and series resistance compared with the planar-ITO type and the AlN-buried type. Furthermore, the multi-transverse mode lasing behavior induced by strong index guiding of the AlN aperture is suppressed to single transverse mode operation by reducing the aperture size. Such design provides a powerful solution for the high performance III-N based VCSELs and is also viable by using current state of the art processing techniques. |
URI: | http://hdl.handle.net/11536/24360 http://dx.doi.org/10.1117/12.2038448 |
ISBN: | 978-0-8194-9914-1 |
ISSN: | 0277-786X |
DOI: | 10.1117/12.2038448 |
期刊: | VERTICAL-CAVITY SURFACE-EMITTING LASERS XVIII |
Volume: | 9001 |
顯示於類別: | 會議論文 |