Inverse Doping Profile of MOSFETs via Geometric Programming

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DC 欄位	值	語言
dc.contributor.author	Li, Yiming	en_US
dc.contributor.author	Chen, Ying-Chieh	en_US
dc.date.accessioned	2014-12-08T15:36:01Z	-
dc.date.available	2014-12-08T15:36:01Z	-
dc.date.issued	2012	en_US
dc.identifier.isbn	978-3-642-22453-9; 978-3-642-22452-2	en_US
dc.identifier.uri	http://hdl.handle.net/11536/24377	-
dc.identifier.uri	http://dx.doi.org/10.1007/978-3-642-22453-9__37	en_US
dc.description.abstract	In this study, we optimize one-dimensional doping profiles between the interface of semiconductor and oxide to the substrate in metal-oxide-semiconductor field-effect transistors (MOSFETs). For a set of given current-voltage curves, the problem is modelled as a geometric programming (GP) problem. The MOSFET\'s DC characteristics including the on-and off-state currents are simultaneously derived as functions of the doping profile in the GP problem.	en_US
dc.language.iso	en_US	en_US
dc.title	Inverse Doping Profile of MOSFETs via Geometric Programming	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1007/978-3-642-22453-9__37	en_US
dc.identifier.journal	SCIENTIFIC COMPUTING IN ELECTRICAL ENGINEERING (SCEE 2010)	en_US
dc.citation.volume	16	en_US
dc.citation.spage	347	en_US
dc.citation.epage	355	en_US
dc.contributor.department	電機工程學系	zh_TW
dc.contributor.department	Department of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:000335745600041	-
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