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dc.contributor.authorLee, Szu-Pingen_US
dc.contributor.authorHuang, Chien-Haoen_US
dc.contributor.authorChan, Ting-Shanen_US
dc.contributor.authorChen, Teng-Mingen_US
dc.date.accessioned2014-12-08T15:36:05Z-
dc.date.available2014-12-08T15:36:05Z-
dc.date.issued2014-05-28en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttp://dx.doi.org/10.1021/am500483jen_US
dc.identifier.urihttp://hdl.handle.net/11536/24418-
dc.description.abstractA new Ce3+-activated thiosilicate phosphor, BaLa2Si2S8:Ce3+, was synthesized by using solid-state methods in a fused silica ampule and found to crystallize in the structure type of La2PbSi2S8. The crystal structure has been characterized by synchrotron X-ray diffraction and refined with Rietveld methods. This novel cyan-emitting phosphor can be excited over a broad range from UV to blue light (380-450 nm) and generates a broadband emission peaking at 471 nm with a quantum efficiency of 36%. Nonradiative transitions between Ce3+ ions in BaLa2Si2S8:Ce3+ have also been demonstrated to be attributable to dipole-dipole interactions, and the critical distance was calculated to be 17.41 angstrom. When BaLa2Si2S8:Ce3+ phosphor was utilized to incorporate with yellow-emitting (Sr,Ca)(2)SiO4:Eu2+ phosphor and red-emitting CaAlSiN3:Eu2+ phosphor on a 430 nm blue LED chip, a warm white light LED device with color rendering index of similar to 96 was obtained. The results indicate that cyan-emitting BaLa2Si2S8:Ce3+ can serve as a potential phosphor for incorporation in fabrication of solid-state lighting. The preparation, spectroscopic characterization, quantum efficiency, decay lifetime, thermal-quenching behavior, and related LED device data are also presented.en_US
dc.language.isoen_USen_US
dc.subjectBaLa2Si2S8:Ce3+en_US
dc.subjectthiosilicate phosphoren_US
dc.subjectphotoluminescenceen_US
dc.subjectwhite-light LEDen_US
dc.titleNew Ce3+-Activated Thiosilicate Phosphor for LED Lighting-Synthesis, Luminescence Studies, and Applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/am500483jen_US
dc.identifier.journalACS APPLIED MATERIALS & INTERFACESen_US
dc.citation.volume6en_US
dc.citation.issue10en_US
dc.citation.spage7260en_US
dc.citation.epage7267en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.department應用化學系分子科學碩博班zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentInstitute of Molecular scienceen_US
dc.identifier.wosnumberWOS:000336639200035-
dc.citation.woscount7-
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