Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wu, Kun-Long | en_US |
dc.contributor.author | Lai, Kuan-Ting | en_US |
dc.contributor.author | Hu, Robert | en_US |
dc.contributor.author | Jou, Christina F. | en_US |
dc.contributor.author | Niu, Dow-Chih | en_US |
dc.contributor.author | Shiao, Yu-Shao | en_US |
dc.date.accessioned | 2014-12-08T15:36:06Z | - |
dc.date.available | 2014-12-08T15:36:06Z | - |
dc.date.issued | 2014-05-01 | en_US |
dc.identifier.issn | 2156-342X | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TTHZ.2014.2315451 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/24444 | - |
dc.description.abstract | This paper details the development of our millimeter-wave wideband power amplifier design. By treating the power combiner as an impedance transformer which allows different loading impedance to be taken into account, a compact wideband power-combining network can be constructed. With small transmission-line attenuation being sustained and maximum output power easily extracted from the transistors over the 77-110 GHz frequency range, a power amplifier can then be designed using 65-nm CMOS process to cover the whole W-band. In the on-wafer measurement, the gain is around 18 dB, the output reflection coefficients is below -10 dB, and the output-referred 1 dB compression point can reach 12 dBm at 1.2 V bias condition; when the bias is increased to 2.5 V, a 18 dBm output power is recorded. To our knowledge, this is the first CMOS power amplifier that covers the whole W-band. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | CMOS | en_US |
dc.subject | impedance transformation | en_US |
dc.subject | millimeter-wave | en_US |
dc.subject | power amplifier | en_US |
dc.subject | power combining | en_US |
dc.subject | wideband | en_US |
dc.title | 77-110 GHz 65-nm CMOS Power Amplifier Design | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TTHZ.2014.2315451 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY | en_US |
dc.citation.volume | 4 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 391 | en_US |
dc.citation.epage | 399 | en_US |
dc.contributor.department | 電機工程學系 | zh_TW |
dc.contributor.department | Department of Electrical and Computer Engineering | en_US |
dc.identifier.wosnumber | WOS:000336223000014 | - |
dc.citation.woscount | 1 | - |
Appears in Collections: | Articles |
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