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dc.contributor.authorZheng, Zhi-Weien_US
dc.contributor.authorHsu, Hsiao-Hsuanen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorChen, Po-Chunen_US
dc.date.accessioned2014-12-08T15:36:06Z-
dc.date.available2014-12-08T15:36:06Z-
dc.date.issued2014-05-01en_US
dc.identifier.issn1862-6254en_US
dc.identifier.urihttp://dx.doi.org/10.1002/pssr.201409039en_US
dc.identifier.urihttp://hdl.handle.net/11536/24451-
dc.description.abstractWe report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 A at 150 degrees C, large off/on resistance window (>200) at 150 degrees C, large rectification ratio of approximate to 300 at 150 degrees C and good current distribution at 85 degrees C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)en_US
dc.language.isoen_USen_US
dc.subjectresistive random access memoriesen_US
dc.subjectY2O3en_US
dc.subjectTiOyen_US
dc.subjectcarrier depletionen_US
dc.subjectresisitive switchingen_US
dc.titleImproved high-temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effecten_US
dc.typeArticleen_US
dc.identifier.doi10.1002/pssr.201409039en_US
dc.identifier.journalPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERSen_US
dc.citation.volume8en_US
dc.citation.issue5en_US
dc.citation.spage431en_US
dc.citation.epage435en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000336495000012-
dc.citation.woscount0-
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