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dc.contributor.authorWu, Chien-Hungen_US
dc.contributor.authorHuang, Hau-Yuanen_US
dc.contributor.authorWang, Shui-Jinnen_US
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorHsu, Hsin-Yuen_US
dc.date.accessioned2014-12-08T15:36:08Z-
dc.date.available2014-12-08T15:36:08Z-
dc.date.issued2014-04-24en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el.2014.0816en_US
dc.identifier.urihttp://hdl.handle.net/11536/24476-
dc.description.abstractAmorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO-TFTs) with the LaAlO3/ZrO2 gate dielectric stack employing a novel atmospheric pressure plasma jet process that results in small subthreshold swing and low threshold voltage are proposed and fabricated. The influence of post-deposition annealing (PDA) temperature on LaAlO3/ZrO2 gate dielectric stack and device performance was investigated. The equivalent oxide thickness of the LaAlO3/ZrO2 dielectric stack decreases from 11.5 nm without annealing to 7 nm after a 500 degrees C annealing was applied. The LaAlO3/ZrO2/a-InGaZnO TFT with a 500 degrees C annealing exhibits a small subthreshold swing of 77 mV.dec(-1), a high field-effect mobility of 9 cm(2).V-1.s(-1) and an excellent current ratio of 1.8 x 10(7), which could be attributed to the improved gate dielectric quality by the PDA. The LaAlO3/ZrO2/a-InGaZnO TFTs with excellent gate control ability allow the device to operate at a low operating voltage with low power consumption.en_US
dc.language.isoen_USen_US
dc.titleInvestigation of LaAlO3/ZrO2/a-InGaZnO thin-film transistors using atmospheric pressure plasma jeten_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el.2014.0816en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume50en_US
dc.citation.issue9en_US
dc.citation.spage706en_US
dc.citation.epage707en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000335565800036-
dc.citation.woscount1-
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