標題: | Natural substrate lift-off technique for vertical light-emitting diodes |
作者: | Lee, Chia-Yu Lan, Yu-Pin Tu, Po-Min Hsu, Shih-Chieh Lin, Chien-Chung Kuo, Hao-Chung Chi, Gou-Chung Chang, Chun-Yen 電子工程學系及電子研究所 光電工程學系 Department of Electronics Engineering and Institute of Electronics Department of Photonics |
公開日期: | 1-四月-2014 |
摘要: | Hexagonal inverted pyramid (HIP) structures and the natural substrate lift-off (NSLO) technique were demonstrated on a GaN-based vertical light-emitting diode (VLED). The HIP structures were formed at the interface between GaN and the sapphire substrate by molten KOH wet etching. The threading dislocation density (TDD) estimated by transmission electron microscopy (TEM) was reduced to.1 x 10(8) cm(-2). Raman spectroscopy indicated that the compressive strain from the bottom GaN/sapphire was effectively released through the HIP structure. With the adoption of the HIP structure and NSLO, the light output power and yield performance of leakage current could be further improved. (C) 2014 The Japan Society of Applied Physics |
URI: | http://dx.doi.org/10.7567/APEX.7.042103 http://hdl.handle.net/11536/24486 |
ISSN: | 1882-0778 |
DOI: | 10.7567/APEX.7.042103 |
期刊: | APPLIED PHYSICS EXPRESS |
Volume: | 7 |
Issue: | 4 |
結束頁: | |
顯示於類別: | 期刊論文 |